HGTP12N60A4

HGTP12N60A4 Datasheet

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A

Part	Datasheet
HGTP12N60A4	HGTP12N60A4 (pdf)

Related Parts	Information
HGT1S12N60A4S9A	HGT1S12N60A4S9A
HGTG12N60A4	HGTG12N60A4

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Data Sheet HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49335. Ordering Information PART NUMBER HGTP12N60A4 HGTG12N60A4 PACKAGE TO-220AB TO-247 BRAND 12N60A4 HGT1S12N60A4S9A TO-263AB 12N60A4 NOTE When ordering, use the entire part number. • >100kHz Operation at 390V, 12A • 200kHz Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. 70ns at TJ = 125oC • Low Conduction Loss • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB ALTERNATE VERSION COLLECTOR FLANGE JEDEC TO-263AB COLLECTOR FLANGE JEDEC STYLE TO-247 COLLECTOR BOTTOM SIDE METAL FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60A4, HGTP12N60A4, HGT1S12N60A4S9A Collector to Emitter Voltage .BVCES Collector Current Continuous At TC = 25oC IC25 At TC = 110oC .C110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Tech Brief 334 TPKG 54 23 96 ±20 ±30 60A at 600V 167 -55 to 150 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS

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Data Sheet

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A

August 2003
600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.
Ordering Information

PART NUMBER HGTP12N60A4 HGTG12N60A4

PACKAGE TO-220AB TO-247

BRAND 12N60A4

HGT1S12N60A4S9A TO-263AB
12N60A4
NOTE When ordering, use the entire part number.
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. 70ns at TJ = 125oC
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR FLANGE

JEDEC TO-263AB

COLLECTOR

FLANGE

JEDEC STYLE TO-247

COLLECTOR BOTTOM SIDE METAL

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2003 Fairchild Semiconductor Corporation

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG12N60A4, HGTP12N60A4, HGT1S12N60A4S9A

Collector to Emitter Voltage .BVCES

Collector Current Continuous At TC = 25oC IC25 At TC = 110oC .C110

Collector Current Pulsed Note 1 ICM

Gate to Emitter Voltage Continuous. VGES

Gate to Emitter Voltage Pulsed .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC

Operating and Storage Junction Temperature Range TJ, TSTG

Maximum Lead Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Tech Brief 334 TPKG
54 23 96 ±20 ±30 60A at 600V 167 -55 to 150
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HGTP12N60A4 Datasheet file may be downloaded here without warranties.

Datasheet ID: HGTP12N60A4 633898