HGT1S3N60A4DS9A

HGT1S3N60A4DS9A Datasheet

HGT1S3N60A4DS, HGTP3N60A4D

Part	Datasheet
HGT1S3N60A4DS9A	HGT1S3N60A4DS9A (pdf)

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Data Sheet HGT1S3N60A4DS, HGTP3N60A4D December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329. Ordering Information PACKAGE BRAND HGT1S3N60A4DS TO-263AB 3N60A4D HGTP3N60A4D TO-220AB 3N60A4D NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A. • >100kHz Operation At 390V, 3A • 200kHz Operation At 390V, 2.5A • 600V Switching SOA Capability • Typical Fall Time 70ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER Model Packaging JEDEC TO-263AB COLLECTOR FLANGE JEDEC TO-220AB COLLECTOR FLANGE Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,417,385 4,605,948 4,430,792 4,620,211 4,443,931 4,631,564 4,466,176 4,639,754 4,516,143 4,639,762 4,532,534 4,641,162 4,587,713 4,644,637 4,682,195 4,803,533 4,888,627 4,684,413 4,809,045 4,890,143 4,694,313 4,809,047 4,901,127 4,717,679 4,810,665 4,904,609 4,743,952 4,823,176 4,933,740 4,783,690 4,837,606 4,963,951 4,794,432 4,860,080 4,969,027 4,801,986 4,883,767 2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Collector to Emitter Voltage. BVCES Collector Current Continuous At TC = 25oC .IC25 At TC = 110oC .IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC .PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech Brief 334 TPKG HGT1S3N60A4DS HGTP3N60A4D 600 17 8 40 ±20 ±30 15A at 600V 70 -55 to 150 300 260 UNITS V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE Pulse width limited by maximum junction temperature. Electrical TJ = 25oC, Unless Otherwise

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Data Sheet

HGT1S3N60A4DS, HGTP3N60A4D

December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49329.
Ordering Information

PACKAGE

BRAND

HGT1S3N60A4DS

TO-263AB
3N60A4D

HGTP3N60A4D

TO-220AB
3N60A4D
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER Model

Packaging

JEDEC TO-263AB

COLLECTOR

FLANGE

JEDEC TO-220AB

COLLECTOR FLANGE

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461
4,417,385 4,605,948
4,430,792 4,620,211
4,443,931 4,631,564
4,466,176 4,639,754
4,516,143 4,639,762
4,532,534 4,641,162
4,587,713 4,644,637
4,682,195 4,803,533 4,888,627
4,684,413 4,809,045 4,890,143
4,694,313 4,809,047 4,901,127
4,717,679 4,810,665 4,904,609
4,743,952 4,823,176 4,933,740
4,783,690 4,837,606 4,963,951
4,794,432 4,860,080 4,969,027
4,801,986 4,883,767
2001 Fairchild Semiconductor Corporation

HGT1S3N60A4DS, HGTP3N60A4D

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Collector to Emitter Voltage. BVCES Collector Current Continuous

At TC = 25oC .IC25 At TC = 110oC .IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC .PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech Brief 334 TPKG

HGT1S3N60A4DS HGTP3N60A4D 600
17 8 40 ±20 ±30 15A at 600V 70 -55 to 150
300 260

UNITS V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE Pulse width limited by maximum junction temperature.

Electrical TJ = 25oC, Unless Otherwise

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Datasheet ID: HGT1S3N60A4DS9A 633894