HGT1S7N60A4DS

HGT1S7N60A4DS Datasheet

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Part	Datasheet
HGT1S7N60A4DS	HGT1S7N60A4DS (pdf)

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Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333. Ordering Information PACKAGE BRAND HGTG7N60A4D HGTP7N60A4D TO-247 TO-220AB G7N60A4D HGT1S7N60A4DS TO-263AB G7N60A4D NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A. • >100kHz Operation At 390V, 7A • 200kHz Operation At 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. 75ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER Model Packaging JEDEC STYLE TO-247 COLLECTOR FLANGE JEDEC TO-220AB E CG COLLECTOR FLANGE JEDEC TO-263AB COLLECTOR FLANGE FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047

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Data Sheet

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

January 2005
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49333.
Ordering Information

PACKAGE

BRAND

HGTG7N60A4D HGTP7N60A4D

TO-247 TO-220AB

G7N60A4D

HGT1S7N60A4DS

TO-263AB

G7N60A4D
NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A.
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER Model

Packaging

JEDEC STYLE TO-247

COLLECTOR FLANGE

JEDEC TO-220AB E CG

COLLECTOR FLANGE

JEDEC TO-263AB

COLLECTOR

FLANGE

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047

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Datasheet ID: HGT1S7N60A4DS 633888