The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
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H11G3300 (pdf) |
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H11G23S |
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H11G2300 |
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H11G2SD |
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H11G1W |
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H11G1SD |
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H11G13SD |
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H11G3S |
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H11G2300W |
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H11G33S |
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H11G3300W |
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H11G1 |
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H11G3 |
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PDF Datasheet Preview |
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HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. H11G1 H11G2 H11G3 • High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature maximum 100 µA at 80°C • Underwriters Laboratory UL recognized File# E90700 • CMOS logic interface • Telephone ring detector • Low input TTL interface • Power supply isolation • Replace pulse transformer ANODE 1 CATHODE 2 6 BASE 5 COLLECTOR N/C 3 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissipation TA = 25°C Derate above 25°C NOTE All dimensions are in inches millimeters Symbol TSTG TOPR TSOL PD VISO IF VR IF pk PD VCEO Value -55 to +150 -55 to +100 260 for 10 sec 260 5300 Units °C °C mW/°C Vac rms V A mW/°C mW/°C 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified. INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic Test Conditions Symbol Device Min EMITTER Forward Voltage IF = 10 mA Forward Voltage Temp. Coefficient IR = 10 µA BVR VF = 0 V, f = 1 MHz VF = 1 V, f = 1 MHz ORDERING INFORMATION Option S SD W 300 300W 3S 3SD Order Entry Identifier .S .SD .W .300W .3S .3SD QT Carrier Tape Specifications “D” Taping Orientation ± ± ± ± ± H11G1, H11G2, H11G3 Description Surface Mount Lead Bend Surface Mount Tape and reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel ± ± ± ± User Direction of Feed NOTE All dimensions are in millimeters 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: Life support devices or systems are devices or systems which, a are intended for surgical implant into the body, or b support or sustain life, and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 2000 Fairchild Semiconductor Corporation 7/21/00 200045A |
More datasheets: TN6726A_D26Z | TN6726A_D27Z | DCME37PE | DM183026-2 | CA3102R16S-8S | H11G2W | H11G1300W | H11G2S | H11G23SD | H11G23S |
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