H11F3SD
H11F3SD Datasheet
H11F1 H11F2 H11F3
| Part | Datasheet |
|---|---|
H11F3SD |
H11F3SD (pdf) |
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H11F3300 |
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H11F2W |
H11F2W |
H11F2SD |
H11F2SD |
H11F2S |
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H11F23SD |
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H11F33SD |
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H11F2300W |
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H11F1SD |
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H11F1S |
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H11F13SD |
H11F13SD |
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H11F13S |
H11F13S |
H11F1300W |
H11F1300W |
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H11F1300 |
H11F1300 |
H11F23S |
H11F23S |
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H11F3S |
H11F3S |
H11F1W |
H11F1W |
H11F3W |
H11F3W |
H11F2 |
H11F2 |
|
H11F1 |
H11F1 |
|
H11F3 |
H11F3 |
| PDF Datasheet Preview |
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| PHOTO FET OPTOCOUPLERS PACKAGE H11F1 H11F2 H11F3 SCHEMATIC ANODE 1 CATHODE 2 OUTPUT TERM. OUTPUT TERM. The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. As a remote variable resistor • to 300 • linearity • 15 pF shunt capacitance • 100 I/O isolation resistance As an analog switch • Extremely low offset voltage • 60 Vpk-pk signal capability • No charge injection or latch-up • ton, toff 15 µS • UL recognized File #E90700 • VDE recognized File #E94766 Ordering option ‘300’ e.g. H11F1.300 As a variable resistor • Isolated variable attenuator • Automatic gain control • Active tuning/band switching As an analog switch • Isolated sample and hold circuit • Multiplexed, optically isolated A/D conversion 2003 Fairchild Semiconductor Corporation Page 1 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings TA = 25°C unless otherwise Parameter Device Derate Linearly From 25°C DETECTOR Power Dissipation 25°C Derate linearly from 25°C Breakdown Voltage either polarity Continuous Detector Current either polarity TSTG TOPR TSOL IF VR IF pk PD BV4-6 I4-6 All H11F1, H11F2 H11F3 All Value Units -55 to +150 -55 to +100 260 for 10 sec mW/°C 300 ±30 ±15 ±100 mW/°C ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise INDIVIDUAL COMPONENT CHARACTERISTICS Off-State Dark Current Off-State Resistance Capacitance Test Conditions IF = 16 mA VR = 5 V = 0 V, f = MHz I4-6 = 10µA, IF = 0 V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, TA = 100°C V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, f = 1MHz Device VF IR CJ BV4-6 I4-6 R4-6 C4-6 H11F1, H11F2 H11F3 All Min Typ* Max Unit ORDERING INFORMATION Option S SD W 300 300W 3S 3SD Order Entry .S .SD .W .300W .3S .3SD MARKING INFORMATION H11F1 H11F2 H11F3 Description Surface Mount Lead Bend Surface Mount Tape and Reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel H11F1 2 V XX YY K 6 1 Fairchild logo 2 Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 2003 Fairchild Semiconductor Corporation Page 8 of 10 3/19/03 PHOTO FET OPTOCOUPLERS Carrier Tape Specifications ± ± ± ± ± User Direction of Feed NOTE All dimensions are in inches millimeters Tape and reel quantity is 1,000 units per reel Black Package, No H11F1 H11F2 H11F3 ± ± ± ± ± ± Temperature °C 215°C, s 225 C peak 200 Time above 183°C, sec Ramp up = 3C/sec 0 1 2 3 4 Time Minute • Peak reflow temperature 225°C package surface temperature • Time of temperature higher than 183°C for seconds • One time soldering reflow is recommended 2003 Fairchild Semiconductor Corporation |
| More datasheets: DS3150GN | H11F2300 | H11F33S | H11F3300W | H11F3300 | H11F2W | H11F2SD | H11F2S | H11F23SD | H11F33SD |
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