FYPF1004DNTU
FYPF1004DNTU Datasheet
FYPF1004DN
| Part | Datasheet |
|---|---|
FYPF1004DNTU |
FYPF1004DNTU (pdf) |
| PDF Datasheet Preview |
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| FYPF1004DN FYPF1004DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection • Switched mode power supply • Freewheeling diodes TO-220F Anode 2.Cathode Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VRRM VR IF AV IFSM Maximum Average Rectified Current TC = 130°C Maximum Forward Surge Current per diode 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Value 40 10 80 -40 to +150 Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case per diode Value Electrical Characteristics per diode TC=25 °C unless otherwise noted Parameter VFM * IRM * Maximum Instantaneous Forward Voltage IF = 5A IF = 5A IF = 10A IF = 10A rated VR * Pulse Test Pulse Width=300µs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value Units V A °C Units °C/W Units V 2000 Fairchild Semiconductor International FYPF1004DN Typical Characteristics Forward Current, I F[A] TJ=125 oC TJ=75 oC TJ=25 oC Forward Voltage Drop, VF[V] |
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