NDM3000

NDM3000 Datasheet

NDM3000 3 Phase Brushless Motor Driver

Part	Datasheet
NDM3000	NDM3000 (pdf)

PDF Datasheet Preview
May 1996 NDM3000 3 Phase Brushless Motor Driver The NDM3000 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 3 phase motor driver such as disk drive spindle motor control and other half bridge applications. Features ±3.0A, ±30V, 2.5W High density cell design for extremely low RDS ON . High power and current handling capability. Industry standard SOIC-16 surface mount package. 11,14 10 12 15 1,16 4,13 8,9 2 5 7 3,6 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage All Types VGSS Gate-Source Voltage All Types Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 - Continuous Q3+Q6 or Q5+Q2 or Q5+Q4 - Pulsed Note 1a & 2 Total Power Dissipation Note 1a Q1+Q4 or Q1+Q6 or Q3+Q2 or Note 1b Q3+Q6 or Q5+Q2 or Q5+Q4 Note 1c TJ,TSTG Operating and Storage Temperature Range 1997 Fairchild Semiconductor Corporation NDM3000 ± 30 ± 20 ± ± 10 -55 to 150 Units V A THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 Note 1a Thermal Resistance, Junction-to-Case Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 Note 1 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS

PDF Datasheet Preview

May 1996

NDM3000 3 Phase Brushless Motor Driver

The NDM3000 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 3 phase motor driver such as disk drive spindle motor control and other half bridge applications.

Features ±3.0A, ±30V, 2.5W High density cell design for extremely low RDS ON . High power and current handling capability. Industry standard SOIC-16 surface mount package.
11,14 10 12 15
1,16 4,13 8,9
2 5 7 3,6

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage All Types

VGSS

Gate-Source Voltage All Types

Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -

Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
- Pulsed

Note 1a & 2

Total Power Dissipation

Note 1a

Q1+Q4 or Q1+Q6 or Q3+Q2 or

Note 1b

Q3+Q6 or Q5+Q2 or Q5+Q4

Note 1c

TJ,TSTG Operating and Storage Temperature Range
1997 Fairchild Semiconductor Corporation

NDM3000 ± 30 ± 20 ±
± 10 -55 to 150

Units V A

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Q1+Q4 or Q1+Q6 or Q3+Q2 or

Q3+Q6 or Q5+Q2 or Q5+Q4

Note 1a

Thermal Resistance, Junction-to-Case

Q1+Q4 or Q1+Q6 or Q3+Q2 or

Q3+Q6 or Q5+Q2 or Q5+Q4

Note 1

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

More datasheets: 1672-20-1-0500-003-1-TS | 1672-20-1-0500-010-1-TS | 1672-20-1-0500-007-1-TS | 1672-20-1-0500-006-1-TS | 1672-20-1-0500-005-1-TS | 1672-20-1-0500-001-1-TS | SW13A65NA01AK | SW13A65NA01BI | SW13A65NA01 | SW-13A65N-A01 BK

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NDM3000 Datasheet file may be downloaded here without warranties.

Datasheet ID: NDM3000 521776