FSBCW30

FSBCW30 Datasheet

FSBCW30

Part	Datasheet
FSBCW30	FSBCW30 (pdf)

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FSBCW30 Discrete POWER & Signal Technologies FSBCW30 E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See BC857A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB x 5" mounting pad in2 of 2oz copper. FSBCW30 500 4 250 Units V mA °C Units mW/°C °C/W 1998 Fairchild Semiconductor Corporation FSBCW30 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units

PDF Datasheet Preview

FSBCW30

Discrete POWER & Signal Technologies

FSBCW30

E B SuperSOTTM-3

PNP General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See BC857A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB x 5" mounting pad in2 of 2oz copper.

FSBCW30 500 4 250

Units

V mA °C

Units
mW/°C °C/W
1998 Fairchild Semiconductor Corporation

FSBCW30

PNP General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

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Datasheet ID: FSBCW30 515503