FQT4N20
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FQT4N20TF (pdf) |
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FQT4N20 FQT4N20 200V N-Channel MOSFET May 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. • 0.85A, 200V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • Improved dv/dt capability G SOT-223 FQT Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 70°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient * * When mounted on the minimum pad size recommended PCB Mount FQT4N20 200 ± 30 52 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W |
More datasheets: BK/C518-5A | BK/C518-500MA | BK/C518-4A | BK/C518-3.5A | BK/C518-3A | BK/C518-375MA | BK/C518-125MA | TR2/C518-4A | 301-9003-01 | ADG731BCP_REEL7 |
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