FQPF5N60

FQPF5N60 Datasheet

FQPF5N60

Part	Datasheet
FQPF5N60	FQPF5N60 (pdf)

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FQPF5N60 FQPF5N60 600V N-Channel MOSFET QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 2.8A, 600V, RDS on = = 10 V • Low gate charge typical 16 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV Note 6 TO-220F FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQPF5N60 600 ± 30 300 40 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2002 Fairchild Semiconductor Corporation FQPF5N60 Electrical Characteristics

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FQPF5N60

FQPF5N60
600V N-Channel MOSFET

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 2.8A, 600V, RDS on = = 10 V
• Low gate charge typical 16 nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV Note 6

TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQPF5N60 600 ± 30 300 40
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2002 Fairchild Semiconductor Corporation

FQPF5N60

Electrical Characteristics

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Datasheet ID: FQPF5N60 515434