FQPF4N90

FQPF4N90 Datasheet

FQPF4N90

Part	Datasheet
FQPF4N90	FQPF4N90 (pdf)

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FQPF4N90 FQPF4N90 900V N-Channel MOSFET October 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. • 2.5A, 900V, RDS on = VGS = 10 V • Low gate charge typically 24 nC • Low Crss typically pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220F IRFS Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQPF4N90 900 10 ± 30 570 47 -55 to +150 2001 Fairchild Semiconductor Corporation Units V A V mJ A mJ V/ns W W/°C °C °C Units °C/W °C/W FQPF4N90

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FQPF4N90

FQPF4N90
900V N-Channel MOSFET

October 2001

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
• 2.5A, 900V, RDS on = VGS = 10 V
• Low gate charge typically 24 nC
• Low Crss typically pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220F

IRFS Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQPF4N90 900 10 ± 30 570 47
-55 to +150
2001 Fairchild Semiconductor Corporation

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units °C/W °C/W

FQPF4N90

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Datasheet ID: FQPF4N90 515422