FQPF4N60
Part | Datasheet |
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FQPF4N60 | FQPF4N60 (pdf) |
PDF Datasheet Preview |
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FQPF4N60 FQPF4N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 2.6A, 600V, RDS on = = 10 V • Low gate charge typical 15 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220F FQPF Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQFP4N60 600 260 36 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units 2000 Fairchild Semiconductor International FQPF4N60 Electrical = 25°C unless otherwise noted |
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