FQPF12N60
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FQPF12N60 (pdf) |
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FQPF12N60T |
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FQPF12N60 FQPF12N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 5.8A, 600V, RDS on = VGS = 10 V • Low gate charge typical 42 nC • Low Crss typical 25 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220F FQPF Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 TJ, TSTG TL Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQPF12N60 600 23 790 55 -55 to +150 Units V A V mJ A mJ W/°C °C Units 2000 Fairchild Semiconductor International FQPF12N60 Electrical = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage |
More datasheets: 96HD2TB-ST-SG7KA1 | 75-0500-6593-9 | UN315-1212 US-Y | UVE305-0510(EU-DC) | UV305-0510(US-DC) | UNE315-1212 (EU-Y) | UN315-1212 (US-LDC) | UNE315-1212 (EU-LDC) | 206 | FQPF12N60T |
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