FQP9N08L

FQP9N08L Datasheet

FQP9N08L

Part	Datasheet
FQP9N08L	FQP9N08L (pdf)

PDF Datasheet Preview
FQP9N08L FQP9N08L 80V LOGIC N-Channel MOSFET December 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. • 9.3A, 80V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 16 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating • Low level gate drive requirements allowing direct operation from logic drives TO-220 FQP Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP9N08L 80 ± 20 55 40 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2000 Fairchild Semiconductor International

PDF Datasheet Preview

FQP9N08L

FQP9N08L
80V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 9.3A, 80V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 16 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing
direct operation from logic drives

TO-220

FQP Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FQP9N08L 80 ± 20 55 40
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W °C/W
2000 Fairchild Semiconductor International

More datasheets: CY8C3445AXI-097 | CY8C3446LTI-071 | CY8C3445LTI-086 | CY8C3444AXI-116 | SEN0121 | DN-19BPN-01-SW | M3274 SL002 | M3274 SL005 | M3274 SL001 | 10305

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQP9N08L Datasheet file may be downloaded here without warranties.

Datasheet ID: FQP9N08L 515366