FQP7N60

FQP7N60 Datasheet


FQP7N60

Part Datasheet
FQP7N60 FQP7N60 FQP7N60 (pdf)
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FQP7N60

FQP7N60
600V N-Channel MOSFET

April 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 7.4A, 600V, RDS on = = 10 V
• Low gate charge typical 29 nC
• Low Crss typical 16 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FQP7N60 600 580 142
-55 to +150
2000 Fairchild Semiconductor International

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units

FQP7N60

Electrical = 25°C unless otherwise noted
More datasheets: B33364A5256J050 | TN01 016 0005 2 | AIMB-267G2-KSA1E | AIMB-267VG-KSA1E | 1700000447 | 177200095300012 | 177200133302005 | 177200133301002 | 177200133300002 | CDB44L11


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Datasheet ID: FQP7N60 515359