FQP11N50CF

FQP11N50CF Datasheet

FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET

Part	Datasheet
FQP11N50CF	FQP11N50CF (pdf)

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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET • 11A, 500V, RDS on = = 10 V • Low Gate Charge typical 43 nC • Low Crss typical 20pF • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode typical 90ns These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220 FQP Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient TO-220F FQPF Series ● ● FQP11N50CF FQPF11N50CF ± 30 -55 to +150 Units V A V mJ A mJ V/ns W/°C °C °C Package Marking and Ordering Information Device Marking FQP11N50CF FQPF11N50CF Device FQP11N50CF FQPF11N50CF Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = A Note 4 Ciss Input Capacitance Coss

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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET

July 2005

FRFET TM

FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
• 11A, 500V, RDS on = = 10 V
• Low Gate Charge typical 43 nC
• Low Crss typical 20pF
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode typical 90ns

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-220

FQP Series

Absolute Maximum Ratings

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

TO-220F

FQPF Series
● ●

FQP11N50CF FQPF11N50CF
± 30
-55 to +150

Units

V A V mJ A mJ V/ns W/°C °C °C
Package Marking and Ordering Information

Device Marking

FQP11N50CF FQPF11N50CF

Device

FQP11N50CF FQPF11N50CF

Package

TO-220 TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = A

Forward Transconductance

Dynamic Characteristics

VDS = 40 V, ID = A

Note 4

Ciss

Input Capacitance

Coss

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Datasheet ID: FQP11N50CF 515286