FQPF12N60CT
FQPF12N60CT Datasheet
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
| Part | Datasheet |
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FQPF12N60CT |
FQPF12N60CT (pdf) |
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FQPF12N60C |
FQPF12N60C |
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| FQP12N60C / FQPF12N60C 600V N-Channel MOSFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET September 2007 QFET • 12A, 600V, RDS on = = 10 V • Low gate charge typical 48 nC • Low Crss typical 21pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TO-220 FQP Series TO-220F FQPF Series Absolute Maximum Ratings Parameter VDSS ID Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics FQP12N60C FQPF12N60C ± 30 -55 to +150 Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP12N60C FQPF12N60C Unit V A V mJ A mJ V/ns W/°C °C °C Unit °C/W °C/W °C/W 2007 Fairchild Semiconductor Corporation Package Marking and Ordering Information Device Marking FQP12N60C FQPF12N60C Device FQP12N60C FQPF12N60C Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 6A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 6A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, Coss |
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