FQP8N60C

FQP8N60C Datasheet

FQP8N60C/FQPF8N60C

Part	Datasheet
FQP8N60C	FQP8N60C (pdf)

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FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 7.5A, 600V, RDS on = = 10 V • Low gate charge typical 28 nC • Low Crss typical 12 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP8N60C FQPF8N60C ± 30 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C

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FQP8N60C/FQPF8N60C

FQP8N60C/FQPF8N60C
600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 7.5A, 600V, RDS on = = 10 V
• Low gate charge typical 28 nC
• Low Crss typical 12 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP8N60C FQPF8N60C
± 30
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

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Datasheet ID: FQP8N60C 515279