FQPF13N50

FQPF13N50 Datasheet


FQP13N50 / FQPF13N50 N-Channel MOSFET

Part Datasheet
FQPF13N50 FQPF13N50 FQPF13N50 (pdf)
Related Parts Information
FQPF13N50T FQPF13N50T FQPF13N50T
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FQP13N50 / FQPF13N50 N-Channel MOSFET

FQP13N50 / FQPF13N50

N-Channel QFET MOSFET
500 V, A, 430

March 2013

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 500 V, RDS on = 430 Max = 10 V, ID = A
• Low Gate Charge Typ. 45 nC
• Low Crss Typ. 25 pF
• 100% Avalanche Tested

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP13N50 FQPF13N50
± 30
-55 to +150
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Datasheet ID: FQPF13N50 515276