FQPF13N50
FQPF13N50 Datasheet
FQP13N50 / FQPF13N50 N-Channel MOSFET
| Part | Datasheet |
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FQPF13N50 |
FQPF13N50 (pdf) |
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FQPF13N50T |
FQPF13N50T |
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| FQP13N50 / FQPF13N50 N-Channel MOSFET FQP13N50 / FQPF13N50 N-Channel QFET MOSFET 500 V, A, 430 March 2013 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 500 V, RDS on = 430 Max = 10 V, ID = A • Low Gate Charge Typ. 45 nC • Low Crss Typ. 25 pF • 100% Avalanche Tested TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP13N50 FQPF13N50 ± 30 -55 to +150 |
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