FQD9N08TM

FQD9N08TM Datasheet

FQD9N08 / FQU9N08

Part	Datasheet
FQD9N08TM	FQD9N08TM (pdf)

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FQD9N08 / FQU9N08 FQD9N08 / FQU9N08 80V N-Channel MOSFET December 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. • 9.3A, 80V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 13 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQD9N08 / FQU9N08 80 ± 25 55 25 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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FQD9N08 / FQU9N08

FQD9N08 / FQU9N08
80V N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 9.3A, 80V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 13 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQD9N08 / FQU9N08 80 ± 25 55 25
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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Datasheet ID: FQD9N08TM 515265