FQD8N25 / FQU8N25
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FQU8N25TU (pdf) |
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FQD8N25TF |
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FQD8N25 / FQU8N25 FQD8N25 / FQU8N25 250V N-Channel MOSFET May 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. • 6.2A, 250V, RDS on = = 10 V • Low gate charge typical 12 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD8N25 / FQU8N25 250 ± 30 120 50 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient |
More datasheets: B43750A4188M000 | B43770A4128M000 | B43750A9138M003 | B43770A9138M003 | B43750A4398M003 | 2858 | ATR4255-ILQH | ATR4255-ILSH | 50738361537600F | CY3210-FANMOD |
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