FQU5N50CTU
FQU5N50CTU Datasheet
FQD5N50C / FQU5N50C
| Part | Datasheet |
|---|---|
FQU5N50CTU |
FQU5N50CTU (pdf) |
| Related Parts | Information |
|---|---|
FQD5N50CTM-WS |
FQD5N50CTM-WS |
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FQD5N50CTM |
FQD5N50CTM |
|
FQD5N50CTF |
FQD5N50CTF |
|
FQD5N50CTM_F080 |
FQD5N50CTM_F080 |
| PDF Datasheet Preview |
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| FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 4.0A, 500V, RDS on = = 10 V • Low gate charge typical 18nC • Low Crss typical 15pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D-PAK G S FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● FQD5N50C / FQU5N50C 500 4 16 ± 30 300 4 48 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter |
| More datasheets: AP1117D25G-13 | AP1117Y25G-13 | T0051383599N | T0051384699N | U95-T151-100A | U95-T1R1-100A | U95-T111-1001 | U95-T151-107A | FS1-Z38-20Z6-10 | FQD5N50CTM-WS |
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