FQD4P40TF

FQD4P40TF Datasheet

FQD4P40 / FQU4P40

Part	Datasheet
FQD4P40TF	FQD4P40TF (pdf)

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FQD4P40 / FQU4P40 FQD4P40 / FQU4P40 400V P-Channel MOSFET January 2009 These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. D-PAK FQD Series • -2.7A, -400V, RDS on = = -10 V • Low gate charge typical 18 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant I-PAK FQU Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2009 Fairchild Semiconductor Internationa FQD4P40 / FQU4P40 -400 ± 30 260 50 -55 to +150 Units V A V mJ A mJ

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FQD4P40 / FQU4P40

FQD4P40 / FQU4P40
400V P-Channel MOSFET

January 2009

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

D-PAK

FQD Series
• -2.7A, -400V, RDS on = = -10 V
• Low gate charge typical 18 nC
• Low Crss typical 11 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

I-PAK

FQU Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
2009 Fairchild Semiconductor Internationa

FQD4P40 / FQU4P40 -400 ± 30 260 50
-55 to +150

Units V A V mJ A mJ

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Datasheet ID: FQD4P40TF 515247