FQD3P20TF

FQD3P20TF Datasheet


FQD3P20 / FQU3P20

Part Datasheet
FQD3P20TF FQD3P20TF FQD3P20TF (pdf)
Related Parts Information
FQU3P20TU FQU3P20TU FQU3P20TU
FQD3P20TM FQD3P20TM FQD3P20TM
PDF Datasheet Preview
FQD3P20 / FQU3P20

FQD3P20 / FQU3P20
200V P-Channel MOSFET

April 2000

QFETTM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
• -2.4A, -200V, RDS on = = -10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, case for 5 seconds

FQD3P20 / FQU3P20 -200 150 37
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
More datasheets: RS3D-13-F | RS3AB-13-F | RS3J-13-F | RS3B-13-F | RS3A-13-F | RS3DB-13-F | RS3BB-13-F | S25FL116K0XMFN010 | FQU3P20TU | FQD3P20TM


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Datasheet ID: FQD3P20TF 515242