FQU3N60CTU

FQU3N60CTU Datasheet

FQD3N60C / FQU3N60C 600V N-Channel MOSFET

Part	Datasheet
FQU3N60CTU	FQU3N60CTU (pdf)

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FQD3N60C / FQU3N60C 600V N-Channel MOSFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET • 2.4A, 600V, RDS on = = 10 V • Low gate charge typical 10.5nC • Low Crss typical 5pF • Fast switching • 100% avalanche tested • Improved dv/dt capability August 2006 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQD3N60C / FQU3N60C 600 ± 30 150 50 -55 to +150 300 FQD3N60C / FQU3N60C 50 110 Package Marking and Ordering Information Device Marking FQD3N60C FQU3N60C Device FQD3N60CTM FQD3N60CTF FQU3N60CTU Package D-PAK D-PAK I-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 2000 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Note 4 Ciss

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FQD3N60C / FQU3N60C 600V N-Channel MOSFET

FQD3N60C / FQU3N60C
600V N-Channel MOSFET
• 2.4A, 600V, RDS on = = 10 V
• Low gate charge typical 10.5nC
• Low Crss typical 5pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

August 2006

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

FQD3N60C / FQU3N60C 600 ± 30 150 50
-55 to +150 300

FQD3N60C / FQU3N60C 50 110
Package Marking and Ordering Information

Device Marking

FQD3N60C FQU3N60C

Device

FQD3N60CTM FQD3N60CTF FQU3N60CTU

Package

D-PAK D-PAK I-PAK

Reel Size
380mm

Tape Width
16mm

Quantity
2500 2000

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = A

VDS = 40 V, ID = A Note 4

Ciss

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Datasheet ID: FQU3N60CTU 515241