FQD30N06L / FQU30N06L
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FQU30N06LTU (pdf) |
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FQD30N06LTM |
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FQD30N06LTF |
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FQD30N06L / FQU30N06L FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET January 2009 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • 24A, 60V, RDS on = VGS = 10V • Low gate charge typical 15 nC • Low Crss typical 50 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 150oC maximum junction temperature rating • Low level gate drive requirements allowing direct operation form logic drivers • RoHS Compliant D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD30N06L / FQR30N06L 60 24 15 96 ± 20 400 24 44 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient |
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