FQU2N80TU
FQU2N80TU Datasheet
FQD2N80 / FQU2N80 N-Channel MOSFET
| Part | Datasheet |
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FQU2N80TU |
FQU2N80TU (pdf) |
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| FQD2N80 / FQU2N80 N-Channel MOSFET April 2013 FQD2N80 / FQU2N80 N-Channel MOSFET 800 V, A, This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. D-PAK • A, 800 V, RDS on = Max. VGS = 10 V, ID = A • Low Gate Charge Typ. 12 nC • Low Crss Typ. pF • 100% Avalanche Tested • RoHS Compliant I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD2N80 / FQU2N80 800 ± 30 180 50 -55 to +150 Unit V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. |
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