FQU13N10TU
FQU13N10TU Datasheet
FQD13N10 / FQU13N10 N-Channel MOSFET
| Part | Datasheet |
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FQU13N10TU |
FQU13N10TU (pdf) |
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| FQD13N10 / FQU13N10 N-Channel MOSFET FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 March 2013 This N-Channel produced using enhancement mode power Fairchild MOSFET is proprietary planar stripe and DMOS technology. This advanced • 10 A, 100 V, RDS on = 180 Max = 10 MOSFET technology has been especially tailored to reduce V, ID = A on-state resistance, and to provide superior switching performance and high avalanche energy strength. These • Low Gate Charge Typ. 12 nC devices are suitable for switched mode power supplies, • Low Crss Typ. 20 pF audio amplifier, DC motor control, and variable switching power applications. • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C |
| More datasheets: 10KENG3EAM(H) | 08KENG3EAM-R(H) | 08KENG3EAM-R | 10KENG3EAM-R | 10KENG3EAM | 03KENG3EAM | 03KENG3EAM-R | 08KENG3EAM | AS1909C188-T | 240-021-18 |
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