FQU13N10TU

FQU13N10TU Datasheet


FQD13N10 / FQU13N10 N-Channel MOSFET

Part Datasheet
FQU13N10TU FQU13N10TU FQU13N10TU (pdf)
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FQD13N10 / FQU13N10 N-Channel MOSFET

FQD13N10 / FQU13N10

N-Channel QFET MOSFET
100 V, 10 A, 180

March 2013

This N-Channel produced using
enhancement mode power Fairchild

MOSFET is proprietary
planar stripe and DMOS technology. This advanced
• 10 A, 100 V, RDS on = 180 Max = 10

MOSFET technology has been especially tailored to reduce

V, ID = A
on-state resistance, and to provide superior switching performance and high avalanche energy strength. These
• Low Gate Charge Typ. 12 nC
devices are suitable for switched mode power supplies,
• Low Crss Typ. 20 pF
audio amplifier, DC motor control, and variable switching power applications.
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
More datasheets: 10KENG3EAM(H) | 08KENG3EAM-R(H) | 08KENG3EAM-R | 10KENG3EAM-R | 10KENG3EAM | 03KENG3EAM | 03KENG3EAM-R | 08KENG3EAM | AS1909C188-T | 240-021-18


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Datasheet ID: FQU13N10TU 515211