FQB7P06 / FQI7P06
Part | Datasheet |
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FQI7P06TU (pdf) |
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FQB7P06TM |
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FQB7P06 / FQI7P06 FQB7P06 / FQI7P06 60V P-Channel MOSFET May 2001 QFET TM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. • -7A, -60V, RDS on = = -10 V • Low gate charge typical nC • Low Crss typical 25 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● FQB7P06 / FQI7P06 -60 -28 ± 25 90 45 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics |
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