FQI7N10LTU

FQI7N10LTU Datasheet


FQB7N10L / FQI7N10L

Part Datasheet
FQI7N10LTU FQI7N10LTU FQI7N10LTU (pdf)
Related Parts Information
FQB7N10LTM FQB7N10LTM FQB7N10LTM
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FQB7N10L / FQI7N10L

FQB7N10L / FQI7N10L
100V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
• 7.3A, 100V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 12 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing
direct operationfrom logic drives

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB7N10L / FQI7N10L 100 ± 20 50 40
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics
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Datasheet ID: FQI7N10LTU 515193