FQB70N10TM_AM002

FQB70N10TM_AM002 Datasheet


FQB70N10 / FQI70N10

Part Datasheet
FQB70N10TM_AM002 FQB70N10TM_AM002 FQB70N10TM_AM002 (pdf)
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FQB70N10 / FQI70N10

FQB70N10 / FQI70N10
100V N-Channel MOSFET

August 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
• 57A, 100V, RDS on = = 10 V
• Low gate charge typical 85 nC
• Low Crss typical 150 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB70N10 / FQI70N10 100 57 228 ± 25 1300 57 16 160
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter
More datasheets: M2497 SL005 | M2497 SL002 | TIP152-S | 5312F5 | 5312F1 | 5312F7 | 5315F1 | 5315F5 | 5315F7 | 264-7SURC/S400-A6


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Datasheet ID: FQB70N10TM_AM002 515191