FQI6N40CTU

FQI6N40CTU Datasheet

FQB6N40C/FQI6N40C

Part	Datasheet
FQI6N40CTU	FQI6N40CTU (pdf)

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FQB6N40C/FQI6N40C FQB6N40C/FQI6N40C 400V N-Channel MOSFET QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • 6A, 400V, RDS on = = 10 V • Low gate charge typical 16nC • Low Crss typical 15pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient FQB6N40C/FQI6N40C 400 6 24 ± 30 270 6 73 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2003 Fairchild Semiconductor Corporation

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FQB6N40C/FQI6N40C

FQB6N40C/FQI6N40C
400V N-Channel MOSFET

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
• 6A, 400V, RDS on = = 10 V
• Low gate charge typical 16nC
• Low Crss typical 15pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

FQB6N40C/FQI6N40C 400 6 24 ± 30 270 6 73
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W °C/W
2003 Fairchild Semiconductor Corporation

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Datasheet ID: FQI6N40CTU 515184