FQB3N60CTM
FQB3N60CTM Datasheet
FQB3N60C 600V N-Channel MOSFET
| Part | Datasheet |
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FQB3N60CTM |
FQB3N60CTM (pdf) |
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| FQB3N60C 600V N-Channel MOSFET FQB3N60C 600V N-Channel MOSFET • 3A, 600V, RDS on = VGS = 10 V • Low gate charge typical nC • Low Crss typical 5 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability May 2006 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB3N60C 600 3 12 ±30 150 3 75 -55 to +150 300 Typ. Package Marking and Ordering Information Device Marking Device FQB3N60C FQB3N60CTM Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 1.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 1.5A Note 4 -- Ciss Input Capacitance |
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