FQB1N60TM
FQB1N60TM Datasheet
FQB1N60 / FQI1N60
| Part | Datasheet |
|---|---|
FQB1N60TM |
FQB1N60TM (pdf) |
| PDF Datasheet Preview |
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| FQB1N60 / FQI1N60 FQB1N60 / FQI1N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 1.2A, 600V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB1N60 / FQI1N60 600 50 40 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C |
| More datasheets: L138-DI-225-RI | L138-FI-225-RC | L138-FG-225-RC | L138-FI-236-RL | QR06A-2/106349 | QR06A-2/106351 | QR06A-2/106352 | QR06A-2/106350 | HFX11S00U | 10822S |
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