FQB19N10TM
FQB19N10TM Datasheet
FQB19N10 / FQI19N10
| Part | Datasheet |
|---|---|
FQB19N10TM |
FQB19N10TM (pdf) |
| PDF Datasheet Preview |
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| FQB19N10 / FQI19N10 FQB19N10 / FQI19N10 100V N-Channel MOSFET October 2008 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • 19A, 100V, RDS on = = 10 V • Low gate charge typical 19 nC • Low Crss typical 32 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating • RoHS Compliant D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQB19N10 / FQI19N10 100 19 76 ± 25 220 19 75 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient |
| More datasheets: 8230-24 | 8230-26 | 8230-28 | 8230-30 | 8230-34 | 8230-38 | 8230-40 | 8230-42 | 8230-14 | 1254-10SDRT/S530-A3 |
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