FQI17N08LTU

FQI17N08LTU Datasheet


FQB17N08L / FQI17N08L

Part Datasheet
FQI17N08LTU FQI17N08LTU FQI17N08LTU (pdf)
Related Parts Information
FQB17N08LTM FQB17N08LTM FQB17N08LTM
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FQB17N08L / FQI17N08L

FQB17N08L / FQI17N08L
80V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 16.5A, 80V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 29 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing
direct operation from logic drives

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB17N08L / FQI17N08L 80 66 ± 20 100 65
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics
More datasheets: HDSP-C2E3 | HDSP-C2L3 | HDSP-C2G3 | HDSP-C2E1 | HDSP-C2G1 | HDSP-C2Y1 | 3498 | VG-1201CA 30.7200M-FBNC3 | VG-1201CA 27.0000M-TANC3 | FQB17N08LTM


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Datasheet ID: FQI17N08LTU 515134