FQB13N50CTM

FQB13N50CTM Datasheet

FQB13N50C/FQI13N50C

Part	Datasheet
FQB13N50CTM	FQB13N50CTM (pdf)

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FQB13N50C/FQI13N50C FQB13N50C/FQI13N50C 500V N-Channel MOSFET October 2008 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 13A, 500V, RDS on = = 10 V • Low gate charge typical 43nC • Low Crss typical 20pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB13N50C / FQI13N50C 500 13 8 52 ± 30 860 13 195 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minium pad size recommended PCB Mount . 2008 Fairchild Semiconductor Corporation

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FQB13N50C/FQI13N50C

FQB13N50C/FQI13N50C
500V N-Channel MOSFET

October 2008

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 13A, 500V, RDS on = = 10 V
• Low gate charge typical 43nC
• Low Crss typical 20pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB13N50C / FQI13N50C 500 13 8 52 ± 30 860 13 195
-55 to +150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient
* When mounted on the minium pad size recommended PCB Mount .
2008 Fairchild Semiconductor Corporation

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Datasheet ID: FQB13N50CTM 515125