FQI13N06LTU
FQI13N06LTU Datasheet
FQB13N06L / FQI13N06L
| Part | Datasheet |
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FQI13N06LTU |
FQI13N06LTU (pdf) |
| Related Parts | Information |
|---|---|
FQB13N06LTM |
FQB13N06LTM |
| PDF Datasheet Preview |
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| FQB13N06L / FQI13N06L FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET May 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • 13.6A, 60V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 17 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB13N06L / FQI13N06L 60 ± 20 90 45 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter |
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