FQB12N60CTM

FQB12N60CTM Datasheet

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Part	Datasheet
FQB12N60CTM	FQB12N60CTM (pdf)

Related Parts	Information
FQI12N60CTU	FQI12N60CTU

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FQB12N60C / FQI12N60C 600V N-Channel MOSFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET • 12A, 600V, RDS on = = 10 V • Low gate charge typical 48 nC • Low Crss typical 21pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant September 2007 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2007 Fairchild Semiconductor Corporation FQB12N60C/FQI12N60C 600 12 48 ± 30 870 12 225 Package Marking and Ordering Information Device Marking FQB12N60C FQI12N60C Device FQB12N60CTM FQI12N60CTU Package D2-PAK I2-PAK Reel Size 330mm - Tape Width 24mm - Quantity 800 50 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6 A VDS = 50 V, ID = 6 A Note 4 Ciss

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FQB12N60C / FQI12N60C 600V N-Channel MOSFET

FQB12N60C / FQI12N60C
600V N-Channel MOSFET
• 12A, 600V, RDS on = = 10 V
• Low gate charge typical 48 nC
• Low Crss typical 21pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

September 2007

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
2007 Fairchild Semiconductor Corporation

FQB12N60C/FQI12N60C 600 12 48 ± 30 870 12 225
Package Marking and Ordering Information

Device Marking

FQB12N60C FQI12N60C

Device

FQB12N60CTM FQI12N60CTU

Package

D2-PAK I2-PAK

Reel Size
330mm -

Tape Width
24mm -

Quantity
800 50

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 6 A

VDS = 50 V, ID = 6 A Note 4

Ciss

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Datasheet ID: FQB12N60CTM 515118