FQI12N60TU

FQI12N60TU Datasheet

FQB12N60 / FQI12N60

Part	Datasheet
FQI12N60TU	FQI12N60TU (pdf)

Related Parts	Information
FQB12N60TM_AM002	FQB12N60TM_AM002

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FQB12N60 / FQI12N60 FQB12N60 / FQI12N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 10.5A, 600V, RDS on = VGS = 10 V • Low gate charge typical 42 nC • Low Crss typical 25 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQB12N60 / FQI12N60 600 42 790 18 180 -55 to +150 Units V A V mJ A mJ V W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount Units 2000 Fairchild Semiconductor International

PDF Datasheet Preview

FQB12N60 / FQI12N60

FQB12N60 / FQI12N60
600V N-Channel MOSFET

April 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 10.5A, 600V, RDS on = VGS = 10 V
• Low gate charge typical 42 nC
• Low Crss typical 25 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation TA = 25°C *

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB12N60 / FQI12N60 600 42 790 18 180
-55 to +150

Units V A V mJ A mJ V W

W/°C °C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

Units
2000 Fairchild Semiconductor International

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Datasheet ID: FQI12N60TU 515117