FQB12N50TM_AM002

FQB12N50TM_AM002 Datasheet


FQB12N50 / FQI12N50

Part Datasheet
FQB12N50TM_AM002 FQB12N50TM_AM002 FQB12N50TM_AM002 (pdf)
Related Parts Information
FQI12N50TU FQI12N50TU FQI12N50TU
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FQB12N50 / FQI12N50

FQB12N50 / FQI12N50
500V N-Channel MOSFET

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.
• 12.1A, 500V, RDS on = = 10 V
• Low gate charge typical 39 nC
• Low Crss typical 25 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB12N50 / FQI12N50 500 ± 30 878 179
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter
More datasheets: 2PDSWTCP | 3PSWSP | 3PDSWT | 3PSWTP | RS16 | RS4 | RS14 | RS15 | RS6 | LPX150-C


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Datasheet ID: FQB12N50TM_AM002 515116