FQB10N20LTM

FQB10N20LTM Datasheet

FQB10N20L / FQI10N20L

Part	Datasheet
FQB10N20LTM	FQB10N20LTM (pdf)

PDF Datasheet Preview
FQB10N20L / FQI10N20L FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET December 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. • 10A, 200V, RDS on = = 10 V • Low gate charge typical 13 nC • Low Crss typical 14 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct operation from logic drivers D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQB10N20L / FQI10N20L 200 10 40 ± 20 180 10 87 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics

PDF Datasheet Preview

FQB10N20L / FQI10N20L

FQB10N20L / FQI10N20L
200V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
• 10A, 200V, RDS on = = 10 V
• Low gate charge typical 13 nC
• Low Crss typical 14 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB10N20L / FQI10N20L 200 10 40 ± 20 180 10 87
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQB10N20LTM Datasheet file may be downloaded here without warranties.

Datasheet ID: FQB10N20LTM 515113