FQI9N08LTU
FQI9N08LTU Datasheet
FQB9N08L / FQI9N08L
| Part | Datasheet |
|---|---|
FQI9N08LTU |
FQI9N08LTU (pdf) |
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| FQB9N08L / FQI9N08L FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET June 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. • 9.3A, 80V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 16 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating • Low level gate drive requirments allowing direct operation from logic drives D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB9N08L / FQI9N08L 80 ± 20 55 40 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics |
| More datasheets: T5761-TGQ | BD249A-S | BD249C-S | BD249B-S | BD249-S | 18488 | 98-0440-4278-0 | 98-0440-4277-2 | 98-0440-4275-6 | 98-0440-4276-4 |
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