FQAF65N06

FQAF65N06 Datasheet

FQAF65N06

Part	Datasheet
FQAF65N06	FQAF65N06 (pdf)

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FQAF65N06 FQAF65N06 60V N-Channel MOSFET May 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • 49A, 60V, RDS on = = 10 V • Low gate charge typical 48 nC • Low Crss typical 100 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating TO-3PF FQAF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQAF65N06 60 49 196 ± 25 660 49 86 -55 to +175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation FQAF65N06

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FQAF65N06

FQAF65N06
60V N-Channel MOSFET

May 2001

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
• 49A, 60V, RDS on = = 10 V
• Low gate charge typical 48 nC
• Low Crss typical 100 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

TO-3PF

FQAF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQAF65N06 60 49 196 ± 25 660 49 86
-55 to +175

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

FQAF65N06

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Datasheet ID: FQAF65N06 515087