FQAF34N25
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FQAF34N25 (pdf) |
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FQAF34N25 October 2001 FQAF34N25 250V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. • 21.7A, 250V, RDS on = = 10 V • Low gate charge typical 60 nC • Low Crss typical 60 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PF FQAF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQAF34N25 250 ± 30 700 10 100 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation FQAF34N25 |
More datasheets: AT29LV1024-20JC | AT29LV1024-20JI | AT29LV1024-20TI | VRAH-03F1A00 | SRAH-03F1A00 | GPF10.1W9 | 7214N/19 | AWP2-10-7241-T-R | 8KH3-0734-0250 | 8KH3-0734-0500 |
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