FQAF11N90

FQAF11N90 Datasheet

FQAF11N90

Part	Datasheet
FQAF11N90	FQAF11N90 (pdf)

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FQAF11N90 FQAF11N90 900V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 7.2A, 900V, RDS on = VGS = 10 V • Low gate charge typical 72 nC • Low Crss typical 30 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PF FQAF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQAF11N90 900 ± 30 1000 12 120 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2000 Fairchild Semiconductor International FQAF11N90

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FQAF11N90

FQAF11N90
900V N-Channel MOSFET

September 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 7.2A, 900V, RDS on = VGS = 10 V
• Low gate charge typical 72 nC
• Low Crss typical 30 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-3PF

FQAF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQAF11N90 900 ± 30 1000 12 120
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2000 Fairchild Semiconductor International

FQAF11N90

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Datasheet ID: FQAF11N90 515061