FQA7N90_F109

FQA7N90_F109 Datasheet


FQA7N90_F109 900V N-Channel MOSFET

Part Datasheet
FQA7N90_F109 FQA7N90_F109 FQA7N90_F109 (pdf)
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FQA7N90_F109 900V N-Channel MOSFET

FQA7N90_F109
900V N-Channel MOSFET
• 7.4A, 900V, RDS on = = 10 V
• Low gate charge typical 45 nC
• Low Crss typical 20pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

September 2007

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

TO-3PN

FQA Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

FQA7N90_F109
900 ± 30 830 22 220 -55 to +150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Units

V A V mJ A mJ V/ns W/°C °C

Units
°C/W °C/W °C/W
2007 Fairchild Semiconductor Corporation

FQA7N90_F109 900V N-Channel MOSFET
Package Marking and Ordering Information

Device Marking Device

FQA7N90

FQA7N90_F109

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 900 V, VGS = 0 V

VDS = 720 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = A

VDS = 50 V, ID = A Note 4

Ciss

Input Capacitance

Coss

Output Capacitance

Crss
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Datasheet ID: FQA7N90_F109 515047