FQA7N80_F109

FQA7N80_F109 Datasheet

FQA7N80 800V N-Channel MOSFET

Part	Datasheet
FQA7N80_F109	FQA7N80_F109 (pdf)

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FQA7N80 800V N-Channel MOSFET FQA7N80 800V N-Channel MOSFET • 7.2A, 800V, RDS on = = 10 V • Low gate charge typical 40 nC • Low Crss typical 19pF • Fast switching • 100% avalanche tested • Improved dv/dt capability September 2006 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TO-3P FQA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds FQA7N80 800 ± 30 580 198 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Units V A V mJ A mJ V/ns W/°C °C Units °C/W °C/W °C/W 2006 Fairchild Semiconductor Corporation FQA7N80 800V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA7N80 Device FQA7N80 FQA7N80_F109 Package TO-3P TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.6A VDS = 50 V, ID = 3.6A Note 4 Ciss Input Capacitance Coss Output Capacitance

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FQA7N80 800V N-Channel MOSFET

FQA7N80
800V N-Channel MOSFET
• 7.2A, 800V, RDS on = = 10 V
• Low gate charge typical 40 nC
• Low Crss typical 19pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

September 2006

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

TO-3P

FQA Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

FQA7N80
800 ± 30 580 198 -55 to +150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Units

V A V mJ A mJ V/ns W/°C °C

Units
°C/W °C/W °C/W
2006 Fairchild Semiconductor Corporation

FQA7N80 800V N-Channel MOSFET
Package Marking and Ordering Information

Device Marking

FQA7N80

Device

FQA7N80 FQA7N80_F109

Package

TO-3P TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 800 V, VGS = 0 V

VDS = 640 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 3.6A

VDS = 50 V, ID = 3.6A Note 4

Ciss

Input Capacitance

Coss

Output Capacitance

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Datasheet ID: FQA7N80_F109 515044