FQA44N10

FQA44N10 Datasheet


FQA44N10

Part Datasheet
FQA44N10 FQA44N10 FQA44N10 (pdf)
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FQA44N10

FQA44N10
100V N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
• 48A, 100V, RDS on = = 10 V
• Low gate charge typical 48 nC
• Low Crss typical 85 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

TO-3P

FQA Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQA44N10 100 48 34 192 ± 25 530 48 18 180
-55 to +175

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W °C/W
2000 Fairchild Semiconductor International

FQA44N10
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Datasheet ID: FQA44N10 515028