FQA34N20L

FQA34N20L Datasheet


FQA34N20L

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FQA34N20L FQA34N20L FQA34N20L (pdf)
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FQA34N20L

FQA34N20L
200V LOGIC N-Channel MOSFET

June 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
• 34A, 200V, RDS on = = 10 V
• Low gate charge typical 55 nC
• Low Crss typical 52 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers

TO-3P

FQA Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQA34N20L 200 34 21 136 ± 20 640 34 21 210
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
2000 Fairchild Semiconductor International

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units °C/W °C/W °C/W
More datasheets: CXA10-48S12J | S10A-93-S10A2-011 | S10A-93-S10A2-012 | S10A-93-S10A1-001 | S10A-93-S10A6-021 | S10A-93-S10A2-015 | S10A-93-S10A6-001 | S10A-93-S10A6-011 | S10A-93-S10A2-014 | S10A-93-S10AA-002


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Datasheet ID: FQA34N20L 515023